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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Output Characteristics and Operating Conditions
2. Measured with output reference load.
3. The ratio of pull-up to pull-down slew rate is specified for the same temperature and
voltage over the entire temperature and voltage range. For a given output, the ratio
represents the maximum difference between pull-up and pull-down drivers due to proc-
ess variation.
4. The output slew rate for falling and rising edges is defined and measured between
V OL(AC) and V OH(AC) .
5. Slew rates are measured under typical simultaneous switching output (SSO) conditions,
with one-half of DQ signals per data byte driving HIGH and one-half of DQ signals per
data byte driving LOW.
Differential Output Slew Rate
With the reference load for timing measurements, the output slew rate for falling and
rising edges is defined and measured between V OL,diff(AC) and V OH,diff(AC) for differential
signals.
Table 75: Differential Output Slew Rate Definition
Measured
Description
From
To
Defined by
Differential output slew rate for rising edge
Differential output slew rate for falling edge
V OL,diff(AC)
V OH,diff(AC)
V OH,diff(AC)
V OL,diff(AC)
[V OH,diff(AC) - V OL,diff(AC)
[V OH,diff(AC) - V OL,diff(AC)
Δ TR diff
Δ TF diff
Note:
1. Output slew rate is verified by design and characterization and may not be subject to
production testing.
Figure 90: Differential Output Slew Rate Definition
TF diff
TR diff
V OH,diff(AC)
0
V OL,diff(AC)
Time
Table 76: Differential Output Slew Rate
Value
Parameter
Differential output slew rate (output impedance = 40 Ω
Symbol
SRQ diff
Min
3.0
Max
7.0
Unit
V/ns
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
129
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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